Researching on Mechanism of SiO2:Mn and Titanium Oxynitride in Resistive Random Access Memory

• Main Author: 張智揚
• Other Authors: 連振炘
• Format: Others
• Language: en_US
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/60054766937514757442

碩士 === 國立清華大學 === 電子工程研究所 === 100 === Memory plays an important role in high technology industry. Flash memory is the most popular non-volatile memory in all memory. However, as the CMOS scaling down, Flash memory faces some issues like leakage current from thin gate oxide. The Resistive Random Access Memory (RRAM) has high potential in the candidates of next-generation memory. RRAM has some advantage: good endurance, short Write - Erase time, low program voltage (program/erase:1~2V), high density(4F2) and simple structure. As a developing device, RRAM still has lots of issues to solve. In the thesis, we are going to discuss the properties by electric measurement and to clarify the physical mechanism. The part 1 is the researching on the SiO2:Mn film. By discussing the property of I/V curve and the current fitting, we can clarify the physic mechanism. An special property is found in the researching. The RRAM has a property of self current compliance even if no applied compliance current in the measure instrument. The current can be reduced by constant voltage stress. The part 2 is the researching on the titanium oxynitride as the switching layer of RRAM. The titanium oxynitride is made by Nitride Acid Oxidation technology, and treat in RTA 400℃for 1 minute. The device is useful in practical application due to its forming free; low current operation(under 10-5uA). The device is interface type RRAM discussed by the experiment. In the end, we improve the endurance by changing the pulse condition from the Fast IV measurement.