Researching on Mechanism of SiO2:Mn and Titanium Oxynitride in Resistive Random Access Memory
碩士 === 國立清華大學 === 電子工程研究所 === 100 === Memory plays an important role in high technology industry. Flash memory is the most popular non-volatile memory in all memory. However, as the CMOS scaling down, Flash memory faces some issues like leakage current from thin gate oxide. The Resistive Random Acce...
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| Format: | Others |
| Language: | en_US |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60054766937514757442 |