The Design of the Photodetectors and Analog Front-Ends for Integrated Optical Receiver in Standard Process

碩士 === 國立清華大學 === 電子工程研究所 === 100 === Along with the improvement of technology, people realized the importance and indispensability of high data rate in communications. The Optical Fiber Communication provides the good properties of high bandwidth interface without the problems seen in electrical in...

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Bibliographic Details
Main Authors: Liao, Wei-Chieh, 廖偉傑
Other Authors: Hsu, Yung-Jane
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/73895527578142102710
Description
Summary:碩士 === 國立清華大學 === 電子工程研究所 === 100 === Along with the improvement of technology, people realized the importance and indispensability of high data rate in communications. The Optical Fiber Communication provides the good properties of high bandwidth interface without the problems seen in electrical interface, and therefore the Optical Fiber Communication System plays an important role in modern data transmission. This thesis can be divided into two parts. One is the design of the analog front-end in a 3.125 Gb/s optical receiver, fabricated in TSMC 0.18μm CMOS technology. The designed optical receiver front-end circuit utilizes high performance differential active Miller capacitor (DAMC) circuits to replace the off-chip capacitors so as to achieve an area-efficient design. The fully integrated design can also avoid off-chip noise interference. The measured results show that it the circuit achieves high precise crossing points and minimal dc offset, at a bit error rate (BER) of 10-12 using the 231-1 pseudo-random bit sequence pattern. The achieved transimpedance gain, power consumption and chip area are 108.02dBΩ, 43.2mW and 0.53mm × 0.61mm, respectively. The results show superior performance when compared with the figures in other works. The other part of the thesis is the design of high responsivity photodetector, implemented through TSMC 0.18μm SiGe BiCMOS process. The responsivity of photodetector is improved by the properties of SiGe heterojunction and phototransistor and which achieves a measured high value of 75 A/W under a 750nm wavelength light.