Design and Fabrication of AlGaN/GaN HEMTs on Silicon Substrates for Millimeter-Wave Applications
碩士 === 國立清華大學 === 電子工程研究所 === 100 === In recent years, GaN-based HEMTs have great potentials for high power and RF applications. The candidate of substrate for HEMTs was usually Sapphire or SiC material in previous day, however, Si has gradually been the choice of substrate for HEMTs recently. The G...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17709223855242832492 |