The surface structure of AlGaInP LEDs with SiO2 nano-pillars prepared by Successive Ionic Layer Adsorption and Reaction method.

• Main Authors: Yi-hsiang Tsai, 蔡逸翔
• Other Authors: Shih -Chang Shei
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/47896026009189478379

碩士 === 國立臺南大學 === 電機工程學系碩士班 === 100 === In this study, ZnO nanorods were grown by Successive Ionic Layer Adsorption and Reaction, (SILAR) method. This experiments were carried out at low temperature 95oC and at normal pressure conditions. ZnO nanorods with different diameters and densities were grown on SiO2 thin films on surface of AlGaInP LEDs by controlling DI water and ethylene glycol rinsing procedures with different solvent volume ratios (water/ethylene glycol). After the SiO2 thin films on AlGaInP LEDs was etching by ICP, the output power variation, voltage variation and wavelength spectrums of AlGaInP LEDs were investigated . The maximum output power could be enhanced 34.5% under 20-mA current injection as compared with the standard surface LEDs. Finally GaP window layer with SiO2 nano-pillars mask were etching by ICP process, the maximum output power could be enhanced 77% under 20mA current injection as compared with the standard surface LEDs. It shows that the output power was improved in the surface-textured AlGaInP LEDs by rough GaP window layer. Roughness of GaP window layer enabled some light, to escape through the semiconductor to air . ZnO nanorods prepared by SILAR method is very effective in improving the light extraction.