Growth behavior of Nickel on Ge(111)-c(2x8) and Ag/Ge(111)-(√3x√3) surface

• Main Authors: Jhen-Hao Li, 李振豪
• Other Authors: Tsu-Yi Fu
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/62339962486569705534

碩士 === 國立臺灣師範大學 === 物理學系 === 100 === Depositing submonolayer of nickel atoms on the clean Ge (111)-c(2x8) substrate at room temperature, then investigating the difference of the surface in different annealing temperatures by scanning tunneling microscope. The clusters distributed on the surface form four kind islands when the annealing temperature rising. After annealing with higher temperature the islands disappear and we guess that the atoms diffuse into the substrate. We also do the experiment at Ag/Ge(111)-(√3x√3) surface, the scanning tunneling microscope images show that the silver buffer layer can prevent the formation of alloys, but the total volume of the clusters and islands on the surface increasing with the higher annealing temperature. That means silver can not prevent the formation of alloys at high temperature. After annealing, three kind islands appearing in different temperature region, only one of them can not be found in the Ni/Ge system. That means the silver atoms playe an important role in Ni/Ag/Ge system.