Aluminum and Indium-Doped Transparent Conductive Zinc-Oxide Thin Films Deposited by the Sol-Gel Method

• Main Authors: Chung-Yen Wang, 王中彥
• Other Authors: Chih-I Wu
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/86880511669714388467

碩士 === 國立臺灣大學 === 光電工程學研究所 === 100 === In this study, we investigate the fabrication process to derive N-type ZnO transparent conductive thin films by sol-gel method and discuss the doping effect on ZnO films. This investigation aims to produce solution-processed ZnO films with lowest resistivity by changing the composition of doping materials. In addition, we wish to realize the effect on electrical and optical properties brought by different doping composition in ZnO films. There are three topics in the thesis：Aluminum-doped ZnO(AZO), Indium-doped ZnO and Aluminum-Indium co-doped ZnO. For Aluminum-doped ZnO, resistivity reaches a minimum value at 0.67% Al doping concentration, with resistivity of 1.78×〖10〗^(-2) Ωcm, electron concentration of 2.92×〖10〗^19 〖cm〗^(-3), and carrier mobility of 12.0〖cm〗^2/Vs. For optical properties, all AZO samples exhibit more than 80% transparent in visible region. For Indium -doped ZnO, resistivity reaches a minimum value at 3.5% In doping concentration, with resistivity of 1.51×〖10〗^(-2) Ωcm, electron concentration of 2.75×〖10〗^19 〖cm〗^(-3), and carrier mobility of 13.0〖cm〗^2/Vs. The IZO samples can reach over than 85% transparent in visible region. For Aluminum-Indium co-doped ZnO, resistivity reaches a minimum value at AIZO film co-doped with 0.67% Al and 1.2 at%, with resistivity of 7.95×〖10〗^(-3) Ωcm, electron concentration of 4.28×〖10〗^19 〖cm〗^(-3), and carrier mobility of 18.3〖cm〗^2/Vs. All AIZO samples demonstrate more than 83% transparent in visible region.