A Study on TeO2 Nanostructure RRAM Device
碩士 === 國立臺灣大學 === 應用物理所 === 100 === In this thesis, a resistive random-access memory was fabricated by using the tellurium dioxide. The nanostructure of the tellurium dioxide was grown on the p-type silicon substrate in a high-temperature furnace. Scanning electron microscopy, Photoluminescence a...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05581999738280561434 |