Spin injection from Ni thin film and Fe3O4 nanoparticle into InGaN/GaN nanorod light-emitting diode

碩士 === 國立臺灣大學 === 應用物理所 === 100 === The motivation of this thesis is to compare the performance of the degree of circularly polarized light between conventional thin film spin-LED and nanorod spin-LED. In our experiment, we compare the degree of circularly polarized light for the thin film and nan...

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Bibliographic Details
Main Authors: Cheng-Yu Ho, 何承育
Other Authors: Yang-Fang Chen
Format: Others
Language:en_US
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/68035608835385142199
Description
Summary:碩士 === 國立臺灣大學 === 應用物理所 === 100 === The motivation of this thesis is to compare the performance of the degree of circularly polarized light between conventional thin film spin-LED and nanorod spin-LED. In our experiment, we compare the degree of circularly polarized light for the thin film and nanorod spin-LEDs, which is composed of InGaN/GaN multiple quantum wells, under an external magnetic field by photoluminescence and electroluminescence. We also deposit the Fe3O4 nanoparticles into the space between nanorods in order to enhance the degree of circularly polarized light arising from nanorod spin-LED. The quantum confined stark effect will gradually vanish and confined potential will become more symmetric as the thin film multiple quantum wells are etched into the nanorod structure. Thus the spin coherent time will become longer in quantum well. In addition, the efficiency of spin valve will increase after the deposition of Fe3O4 nanoparticles. Due to the increment for both the spin coherence time and efficiency of spin valve, our results show that the degree of circularly polarized light of the nanorod spin-LED with Fe3O4 nanoparticles under low external magnetic field and room temperature can be more than 10%. Its excellence performance and practical working condition make nanorod spin-LED becomes a potential spin device.