Optoelectronic Properties and Electronic Structures of One-dimensional Semiconducting/Piezoelectric Nanostructures with Sizes beyond the Quantum Confinement Regime
博士 === 國立臺灣大學 === 電機工程學研究所 === 100 === In this thesis, we studied optoelectronic properties and electronic structures of one-dimensional (1-D) semiconducting/piezoelectric nanostructures with sizes beyond the quantum confinement regime and discussed their superior optoelectronic/photonic features as...
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ndltd-TW-100NTU054420082016-04-04T04:17:30Z http://ndltd.ncl.edu.tw/handle/79291308013792594781 Optoelectronic Properties and Electronic Structures of One-dimensional Semiconducting/Piezoelectric Nanostructures with Sizes beyond the Quantum Confinement Regime 一維奈米半導體/壓電材料在非量子局限尺寸下之光電性質與電子結構研究 Cheng-Ying Chen 陳政營 博士 國立臺灣大學 電機工程學研究所 100 In this thesis, we studied optoelectronic properties and electronic structures of one-dimensional (1-D) semiconducting/piezoelectric nanostructures with sizes beyond the quantum confinement regime and discussed their superior optoelectronic/photonic features as compared to their thin film of bulk counterpart. First of all, since 1-D nanostructures have subwavelength diameters and large aspect ratios, which combined with the high permittivity of semiconductors lead to a strong optical anisotropy, we report a novel optically anisotropic metamaterial based on single crystalline ZnO nanowire arrays (NWAs) with highly oblique angles (75o–85o), exhibiting giant in-plane birefringence and optical polarization degree in photoluminescence emission. The in-plane birefringence ( 0.11) of oblique-aligned ZnO NWAs is almost one order of magnitude higher than that of ZnO bulk. The oblique-aligned NWAs not only allow important technological applications in passive photonic components but also benefit the development of the optoelectronic devices in polarized light sensing and emission. Second, in 1-D nanostructures, with large surface-to-volume ratios and Debye lengths comparable to their diameters, their electronic and optoelectronic properties are strongly affected by the electronic structures at their surfaces. Here we systematically and in-depth investigated the correlation between electronic structures (especially at the surface) of 1-D (Er-doped) ZnO nanostrucrures and their optoelectronic properties through the following four subjects: (1) in situ probing the surface band bending (SBB) of the ZnO NWs using photoelectron spectroscopy in conjunction with the field-effect transistor measurements; (2) correlation between electronic structures of Er-Doped ZnO nanorod arrays and efficiency of 1.54 μm emission by studied by X-ray absorption spectroscopy; (3) enhanced near-band-edge emission of ZnO nanorods via the surface passivation; (4) correlation between photoresponse of ZnO nanobelts and the surface/interface effects. These studies are greatly beneficial for the 1-D nanostructure based device design of sensor and optoelectronic applications. Finally, since ZnO is the wurtzite polar semiconductor and has the electromechanical coupling effect, piezoelectric characteristics of well-aligned ZnO NWAs were investigated for energy-harvesting nanodevices via its piezoelectricity. Besides, lead zirconate titanate [PbZr1−xTixO3 (PZT)] is a typical piezoelectric material, so the PbZr02Ti0.8O3 NWAs were also studied. This study is useful for optimizing the performance for nanogenerator applications. 何志浩 2012 學位論文 ; thesis 131 en_US |
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博士 === 國立臺灣大學 === 電機工程學研究所 === 100 === In this thesis, we studied optoelectronic properties and electronic structures of one-dimensional (1-D) semiconducting/piezoelectric nanostructures with sizes beyond the quantum confinement regime and discussed their superior optoelectronic/photonic features as compared to their thin film of bulk counterpart.
First of all, since 1-D nanostructures have subwavelength diameters and large aspect ratios, which combined with the high permittivity of semiconductors lead to a strong optical anisotropy, we report a novel optically anisotropic metamaterial based on single crystalline ZnO nanowire arrays (NWAs) with highly oblique angles (75o–85o), exhibiting giant in-plane birefringence and optical polarization degree in photoluminescence emission. The in-plane birefringence ( 0.11) of oblique-aligned ZnO NWAs is almost one order of magnitude higher than that of ZnO bulk. The oblique-aligned NWAs not only allow important technological applications in passive photonic components but also benefit the development of the optoelectronic devices in polarized light sensing and emission.
Second, in 1-D nanostructures, with large surface-to-volume ratios and Debye lengths comparable to their diameters, their electronic and optoelectronic properties are strongly affected by the electronic structures at their surfaces. Here we systematically and in-depth investigated the correlation between electronic structures (especially at the surface) of 1-D (Er-doped) ZnO nanostrucrures and their optoelectronic properties through the following four subjects: (1) in situ probing the surface band bending (SBB) of the ZnO NWs using photoelectron spectroscopy in conjunction with the field-effect transistor measurements; (2) correlation between electronic structures of Er-Doped ZnO nanorod arrays and efficiency of 1.54 μm emission by studied by X-ray absorption spectroscopy; (3) enhanced near-band-edge emission of ZnO nanorods via the surface passivation; (4) correlation between photoresponse of ZnO nanobelts and the surface/interface effects. These studies are greatly beneficial for the 1-D nanostructure based device design of sensor and optoelectronic applications.
Finally, since ZnO is the wurtzite polar semiconductor and has the electromechanical coupling effect, piezoelectric characteristics of well-aligned ZnO NWAs were investigated for energy-harvesting nanodevices via its piezoelectricity. Besides, lead zirconate titanate [PbZr1−xTixO3 (PZT)] is a typical piezoelectric material, so the PbZr02Ti0.8O3 NWAs were also studied. This study is useful for optimizing the performance for nanogenerator applications.
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何志浩 |
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何志浩 Cheng-Ying Chen 陳政營 |
author |
Cheng-Ying Chen 陳政營 |
spellingShingle |
Cheng-Ying Chen 陳政營 Optoelectronic Properties and Electronic Structures of One-dimensional Semiconducting/Piezoelectric Nanostructures with Sizes beyond the Quantum Confinement Regime |
author_sort |
Cheng-Ying Chen |
title |
Optoelectronic Properties and Electronic Structures of One-dimensional Semiconducting/Piezoelectric Nanostructures with Sizes beyond the Quantum Confinement Regime |
title_short |
Optoelectronic Properties and Electronic Structures of One-dimensional Semiconducting/Piezoelectric Nanostructures with Sizes beyond the Quantum Confinement Regime |
title_full |
Optoelectronic Properties and Electronic Structures of One-dimensional Semiconducting/Piezoelectric Nanostructures with Sizes beyond the Quantum Confinement Regime |
title_fullStr |
Optoelectronic Properties and Electronic Structures of One-dimensional Semiconducting/Piezoelectric Nanostructures with Sizes beyond the Quantum Confinement Regime |
title_full_unstemmed |
Optoelectronic Properties and Electronic Structures of One-dimensional Semiconducting/Piezoelectric Nanostructures with Sizes beyond the Quantum Confinement Regime |
title_sort |
optoelectronic properties and electronic structures of one-dimensional semiconducting/piezoelectric nanostructures with sizes beyond the quantum confinement regime |
publishDate |
2012 |
url |
http://ndltd.ncl.edu.tw/handle/79291308013792594781 |
work_keys_str_mv |
AT chengyingchen optoelectronicpropertiesandelectronicstructuresofonedimensionalsemiconductingpiezoelectricnanostructureswithsizesbeyondthequantumconfinementregime AT chénzhèngyíng optoelectronicpropertiesandelectronicstructuresofonedimensionalsemiconductingpiezoelectricnanostructureswithsizesbeyondthequantumconfinementregime AT chengyingchen yīwéinàimǐbàndǎotǐyādiàncáiliàozàifēiliàngzijúxiànchǐcùnxiàzhīguāngdiànxìngzhìyǔdiànzijiégòuyánjiū AT chénzhèngyíng yīwéinàimǐbàndǎotǐyādiàncáiliàozàifēiliàngzijúxiànchǐcùnxiàzhīguāngdiànxìngzhìyǔdiànzijiégòuyánjiū |
_version_ |
1718215714557394944 |