Direct Simulation of Electron Transport in Semiconductors Based on Boltzmann-Poisson Equation
碩士 === 國立臺灣大學 === 應用力學研究所 === 100 === The electron transport in semiconductor devices is simulated by using direct algorithm for solving the semiclassical Boltzmann-BGK equation coupled with Poisson equation. The numerical method is based on the discrete ordinate method and high-resolution methods s...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/02462412529069971494 |
| Summary: | 碩士 === 國立臺灣大學 === 應用力學研究所 === 100 === The electron transport in semiconductor devices is simulated by using direct algorithm for solving the semiclassical Boltzmann-BGK equation coupled with Poisson equation. The numerical method is based on the discrete ordinate method and high-resolution methods such as TVD (Total Variation Diminishing) method and WENO (Weighted Essentially Non-Oscillatory) method. The algorithm is implemented for solving one-dimensional electron flow that treats electron as particles obey the Maxwell-Boltzmann and Fermi-Dirac statistics. In this paper, using different mobility model to obtain different relaxation time approximation. Finally, simulating the electron flow under different voltage bias for comparison.
|
|---|