Direct Simulation of Electron Transport in Semiconductors Based on Boltzmann-Poisson Equation
碩士 === 國立臺灣大學 === 應用力學研究所 === 100 === The electron transport in semiconductor devices is simulated by using direct algorithm for solving the semiclassical Boltzmann-BGK equation coupled with Poisson equation. The numerical method is based on the discrete ordinate method and high-resolution methods s...
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ndltd-TW-100NTU054990142015-10-13T21:45:44Z http://ndltd.ncl.edu.tw/handle/02462412529069971494 Direct Simulation of Electron Transport in Semiconductors Based on Boltzmann-Poisson Equation 基於波茲曼-帕松方程之半導體電子傳輸數值模擬 Kuan-Ho Lao 勞冠豪 碩士 國立臺灣大學 應用力學研究所 100 The electron transport in semiconductor devices is simulated by using direct algorithm for solving the semiclassical Boltzmann-BGK equation coupled with Poisson equation. The numerical method is based on the discrete ordinate method and high-resolution methods such as TVD (Total Variation Diminishing) method and WENO (Weighted Essentially Non-Oscillatory) method. The algorithm is implemented for solving one-dimensional electron flow that treats electron as particles obey the Maxwell-Boltzmann and Fermi-Dirac statistics. In this paper, using different mobility model to obtain different relaxation time approximation. Finally, simulating the electron flow under different voltage bias for comparison. 楊照彥 2012 學位論文 ; thesis 85 zh-TW |
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碩士 === 國立臺灣大學 === 應用力學研究所 === 100 === The electron transport in semiconductor devices is simulated by using direct algorithm for solving the semiclassical Boltzmann-BGK equation coupled with Poisson equation. The numerical method is based on the discrete ordinate method and high-resolution methods such as TVD (Total Variation Diminishing) method and WENO (Weighted Essentially Non-Oscillatory) method. The algorithm is implemented for solving one-dimensional electron flow that treats electron as particles obey the Maxwell-Boltzmann and Fermi-Dirac statistics. In this paper, using different mobility model to obtain different relaxation time approximation. Finally, simulating the electron flow under different voltage bias for comparison.
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author2 |
楊照彥 |
author_facet |
楊照彥 Kuan-Ho Lao 勞冠豪 |
author |
Kuan-Ho Lao 勞冠豪 |
spellingShingle |
Kuan-Ho Lao 勞冠豪 Direct Simulation of Electron Transport in Semiconductors Based on Boltzmann-Poisson Equation |
author_sort |
Kuan-Ho Lao |
title |
Direct Simulation of Electron Transport in Semiconductors Based on Boltzmann-Poisson Equation |
title_short |
Direct Simulation of Electron Transport in Semiconductors Based on Boltzmann-Poisson Equation |
title_full |
Direct Simulation of Electron Transport in Semiconductors Based on Boltzmann-Poisson Equation |
title_fullStr |
Direct Simulation of Electron Transport in Semiconductors Based on Boltzmann-Poisson Equation |
title_full_unstemmed |
Direct Simulation of Electron Transport in Semiconductors Based on Boltzmann-Poisson Equation |
title_sort |
direct simulation of electron transport in semiconductors based on boltzmann-poisson equation |
publishDate |
2012 |
url |
http://ndltd.ncl.edu.tw/handle/02462412529069971494 |
work_keys_str_mv |
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