Preparation and analysis of ink-printed CuInGaSe2 solar cells by using different precursors

• Main Authors: Jian-Jhih Chen, 陳建志
• Other Authors: Dong-Hau Kuo
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/64882974669273656585

碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 100 === The non-vacuum processes for Cu(In,Ga)Se2(CIGSe) solar cells have gradually attracted the researches’ attentions. However, the major problem of the non-vacuum processes is the densification, grain size and the purity of the p-type absorption layer. In the study, CIGSe thin film solar cells were prepared by using ink-printing on alumina substrates. The p-type absorption layers were prepared with different precursor (CIGSe, CIGSe + 10 mol% Te, CIGSe + 5 mol% Sb2S3, and CIG and CIGZT cermets), followed by selenization with different Se sources and annealing temperatures. The CIGSe solar cell was constituted with the stacking form of Ag/ITO/ZnO/CdS/ ink-printing CIGSe/Mo/Al2O3. The quality of the absorption layer was analyzed by X-ray diffractometer, field-emission scanning electron microscope equipped with energy dispersive X-ray spectrometer and Hall measurement. The performance of the solar cells was evaluated under the standard AM1.5 illumination. The experimental results showed that the ink-printing CIGSe thin film of a thickness of 2-5 μm with the CIGSe + 5 mol% Sb2S3 ceramic precursor after selenization at 650 oC had shown the best performance with dense microstructure, desired composition, and the grain size of 500 nm. On the other hand, the CIGSe films obtained from CIG and CIGZT cermet precursors after selenization at 650 oC had good crystillinity and large grain size of 1-2μm. The stacked solar cells displayed the power conversion efficiencies of 0.268% (CIGSe + 5mol % Sb2S3), 0.96% (CIG) and 0.861% (CIGZT).