Characterization of transparent conducting ITO thin films prepared by ion beam sputter deposition
碩士 === 國立臺灣科技大學 === 電子工程系 === 100 === ITO thin films have been deposited on glass substrates by reactive ion beam sputter deposition at 25, 100 and 200?aC. The effect of growth temperature and annealing conditions on the property of ITO thin films are investigated. ITO thin films deposited at room...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5n954q |
| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 100 === ITO thin films have been deposited on glass substrates by reactive ion beam sputter deposition at 25, 100 and 200?aC. The effect of growth temperature and annealing conditions on the property of ITO thin films are investigated. ITO thin films deposited at room temperature are amorphous, while samples deposited at 100 and 200?aC are polycrystalline. The crystalline quality of the thin film is further improved after annealing. The resistivity of ITO thin films decreases from 7.6?e10-3 to 6.5?e10-4 Ω cm as deposition temperature increases from 25 to 250?aC, which is due to increased amount of oxygen vacancy defects that act as donors. The resistivity is further improved after post-growth annealing which result from improved crystalline quality. After annealing, the transmittance of the ITO thin film is higher than 80% in the visible region.
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