| Summary: | 碩士 === 國立臺灣科技大學 === 機械工程系 === 100 === Chemical mechanical planarization (CMP) has become a popular technology in semiconductor manufacturing process. Substrate of light emitted diode (LED) are usually planarized by the Machano-Chemical Polishing (MCP) proceed due to the solid-phase chemical passivation between substrate material and abrasive grits. Since of the current low efficiency, thus this study is to develop a hybrid energy mechanism to assist in generating hydrolysis reacted layer on lithium aluminate (LAO) substrates. This Hybrid-Energy assisted Chemical Mechanical Planarization (HACMP) process achieves higher material removal rate and global planarization by such hydrolysis reaction and abrasive processing. Furthermore, the depth of sub-surface damage layer of LAO substrate before and after polishing process. Experimental results shows that the slurry with DI-water (DIW) to proceed the HACMP and achieve MRR increasing about 22% under the work temperature 80°C. The surface roughness is reduces as 20% and MRR can increased as 29% with adding 50% water concentration into slurry in the HACMP process. Thus, slurry comsumption can reduce upto 25% compare with the conventional polishing process. Results can be applied to further slurry analysis for LAO substrate and process optimization, especially for the LED substrate demands in the near future.
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