Study of Microwave Dielectric Properties and Applications of Modified Complex Perovskite Nd(Co1/2Ti1/2)O3 Ceramics

• Main Authors: Chang, Yu-Hsuan, 張郁旋
• Other Authors: Hsu, Cheng-Hsing
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/8g3vn2

碩士 === 國立聯合大學 === 電機工程學系碩士班 === 100 === This study elucidates the microwave dielectric properties and the microstructures of Nd(Co1/2Ti1/2)O3 ceramics that were prepared by the conventional solid-state route. 1. Different Sintering Aid in Nd(Co1/2Ti1/2)O3 At 1300℃ for 4 h, Nd(Co1/2Ti1/2)O3 ceramics with 1 wt% 60P2O5-15ZnO-5La2O3-5Al2O3-5Na2O-5MgO-5Yb2O3(PZLANMY) addition possesses a dielectric constant (εr) of 26.6, a Q×f value of 64000 GHz and a temperature coefficient of resonant frequency (τf) of -29 ppm/℃. At 1300℃ for 4 h, Nd(Co1/2Ti1/2)O3 ceramics with 1 wt% 11SiO2-51P2O5-5Na2O-25ZnO-8Al2O3 (SPNZA) addition possesses a dielectric constant (εr) of 27.2, a Q×f value of 39000 GHz and a temperature coefficient of resonant frequency (τf) of -40 ppm/℃. 2. The ZnO-doped Nd(Co1/2Ti1/2)O3 thin films ZnO-doped Nd(Co1/2Ti1/2)O3 were desposited on Si (100) substrate by rf magnetron sputtering in this study. The dependeuce of the physical and electrical properties of ZnO-Nd(Co1/2Ti1/2)O3 on different rf powers (250W ~350W), substrate temperatures (100℃~250℃), Ar/O2 ratios (100/0~ 80/20) , annealing temperatures (700℃ and 800℃) and deposited films (5 and 10 mins)was also investigated.