Electronic Transport Mechanisms in Split-gate Controlled Semiconductor Quantum Devices
碩士 === 國立聯合大學 === 機械工程學系碩士班 === 100 === The thesis studies the electronic transport characteristics in semiconductor quantum devices. We use the split-gate to control the width of the quantum device. In addition, an AC-biased top-gate is applied in front of the split-gate to investigate time-depen...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25359805127541470504 |
| Summary: | 碩士 === 國立聯合大學 === 機械工程學系碩士班 === 100 === The thesis studies the electronic transport characteristics in semiconductor quantum devices. We use the split-gate to control the width of the quantum device. In addition, an AC-biased top-gate is applied in front of the split-gate to investigate time-dependent quantum transport mechanisms. We use the time-dependent mode-matching method to investigate the time-dependent quantum transport mechanisms of quantum devices with different geometric structures. The geometric structure may involve mode-mixing effects and induce inter-subband transisition effects. The periodic time-varing potential energy may let the conduction electrons absorb or emit photon energies to induce inter-sideband transition effects, and then to achieve the photon-assisted to photon-suppressed quantum transport characheristics. Morover, we also investigate how the frequency response and the temperature effects influence the electronic transport characteristics.
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