Development of Screen-Printed Etch-Barrier for Interdigitated Back Contact Silicon Solar Cell Applications

• Main Authors: Chin-Cheng Chen, 陳志誠
• Other Authors: 鄭錦隆
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/k3j6hc

碩士 === 國立虎尾科技大學 === 機械與機電工程研究所 === 100 === In this thesis, the developments of the screen-printed etch-barrier (SPEB) for interdigitated back contact (IBC) silicon solar cell (SSC) applications were demonstrated. The conditions of SPEB include treated temperature and time. By tuning the ratio of KOH and isopropylalchohol (IPA), the single-side texturization can be obtained. Compared with the silicon nitride films deposited by plasma-enhanced chemical vapour deposition (PECVD), the benefits of SPEB are cheap and simply. According the results, the single-side texturization will be affected by the treated temperature and the fired time of SPEB. The results suggest that the SPEB with 840 oC, 25 min annealing can be used for the single-side texturization for IBCSSC applications. The conditions of texturization can be achieved by the ratio of the KOH:IPA in 1:1 under at 83 oC, 25 min treatment. Regarding to the removal of the textured SPEB, the textured SPEB can be removed by the ratio of H2SO4:H2O2 in 3:1 under treated at 120 oC, 10 min.