Optoelectronic properties of ZnO-based film and its application on photodiodes and GaN-based light-emitting diodes

• Main Authors: Ching-Ho Tien, 田青禾
• Other Authors: 陳隆建
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/88wc9n

博士 === 國立臺北科技大學 === 光電工程系研究所 === 100 === ZnO-based films (ZnO and MnZnO) were deposited by solution chemical vapor deposition (SCVD) and its application photodiodes and GaN-based light-emitting diodes (LEDs), respectively. This study discusses the effects of magneto-optical multiplication, spin-polarized injection and photo-ionization. This study divided into three parts to be explored. Firstly, this study discusses the optoelectronic properties of ZnO and MnZnO films with and without in the presence of a magnetic field. This study also examines the magneto-optical effect of ZnO-based films. Secondly, we presents p-ZnO/SiO2 ultrathin interlayer/n-Si heterostructure ultraviolet (UV) photodiodes with a in a strong magnetic field. Placing a photodiode in a strong magnetic field increased the total current under illumination by approximately one order of magnitude, mainly because the magnetic field induced a photocurrent by magneto-optical multiplication effects. The absorption tail of the responsivity exhibitive a blue shift in the field is observed. This shift is attributed to the magneto-optic absorption associated with the Landau splitting. Thirdly, this study discusses the MnZnO films as a spin-injection layer formed on the surface of GaN-based LEDs. In a magnetic field, the optical output power of GaN-based LEDs is increased by about 60% and 50% at injection currents of 20 and 100 mA, respectively. Spin-polarized injection from MnZnO film and photo-ionization in GaN-based LED can efficiently improve the optical output power of a GaN-based LED. The spin-polarized current-to-total current ratio at forward bias of 3.4 V is 2.77%. This result is consistent with the EL polarization is 2.9% and PL polarization is 3.6% at a forward current of 20 mA in a 0.5 T magnetic field.