| Summary: | 碩士 === 國立雲林科技大學 === 材料科技研究所 === 100 === In this study, we fabricated zinc oxide nanowires with p-n junctions and high orientation over a large area of an Al-doped ZnO thin film (AZO)/SiO2/Si substrate, using aluminum chloride (AlCl3) as the doping source. Specimens were placed in an ammonium hypophosphite (NH4H2PO2) solution to grow ZnO nanowire with p-n junctions. This study comprised four major investigations: the growth rate of the p-type ZnO nanowire array, the growth rates resulting from different concentrations, the respective p-n junctions resulting from p-type ZnO nanowires with AZO film and from n-type ZnO nanowire formed by AlCl3, and finally, the applicability of structures with n-p-n junctions.
We tested various parameters to optimize the fabrication of p-type nanowires for p-n junctions as well as those for n-type nanowires. We subsequently analyzed and compared the morphologies, crystalline structures, and electrical properties of the thin films. Scanning electrical microscopy and X-ray diffraction show hexagonal columnar structures in the ZnO nanowires; wurtzite crystal structure, and strong c-axis orientation were observed in the p-n
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junctions. EDS line scan analysis confirmed the distribution of the doped phosphorus and aluminum. We measured the I-V electrical properties of the specimens, the results of which indicated good rectification characteristics. We therefore confirm that structures with p-n junction can be fabricated using the hydrothermal method.
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