Fabrication of ITO/SiO2 thin films for Crystalline Silicon Solar Cell

• Main Authors: Chang-lin Wu, 吳長霖
• Other Authors: Shih-chih Chen
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/56259574796586947329

碩士 === 國立雲林科技大學 === 電子與光電工程研究所碩士班 === 100 === In this study we use simulation to find the effect of the gradient layer, and then we focus on the fabrication of ITO which investigates the effect of parameter for ITO by Radio Frequency Magnetron Sputtering. Finally we combine with SiO2 and Ag contact to complete the double anti-reflection layer. In the simulation we find that it can reduce the reflection of light by insert the gradient layer of (SiO2)x(Si3N4)y between SiO2 and Si3N4 and we can get 7.84% average reflectance. The other way we investigate the effect of parameter for ITO. We find the best resistivity at RF power of 100w, and the resistivity about 6.26*10-4Ω-cm. We also find the resistivity don’t change with the thickness but the average reflectance deteriorate when increase of the thickness. The post annealing was done in air and in vacuum, respectively. The effects of annealing on the structure, surface morphology, optical and electrical properties of the ITO films were studied. The results show that the increase of the annealing temperature improves the optical and electrical properties. The average reflectance and average transmittance in glass and poly-silicon substrates are 86.4% and 14.89% respectively. The resistivity of the films deposited in glass and poly-silicon is about 3.21*10-4Ω-cm . We also use hydrogen plasma to treatment our ITO films. The resistivity of the films deposited is about 3.21*10-4Ω-cm and falls down to 2.82*10-4Ω-cm as the treatment time is increased to 60s. The average transmittance of the ITO /SiO2 deposited is about 11.86% as the annealing temperature is increased to 650oC. The temperatures of Ag contact in ITO and ITO /SiO2 are 350oC and 650oC respectively.