Electrical Characteristic and Reliability of Al2O3/HfO2 Stack High-K Gate Dielectric
碩士 === 國立雲林科技大學 === 電子與光電工程研究所碩士班 === 100 === High-dielectric constant (high-K) material has been used to replace the conventional ultra-thin SiO2 because the latter suffers from large direct tunneling leakage current, which leads to large power consumption. Many kinds of high-K materials can be use...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13842318907211430059 |
| Summary: | 碩士 === 國立雲林科技大學 === 電子與光電工程研究所碩士班 === 100 === High-dielectric constant (high-K) material has been used to replace the conventional ultra-thin SiO2 because the latter suffers from large direct tunneling leakage current, which leads to large power consumption. Many kinds of high-K materials can be used as the gate dielectric. Among them, Hf-based dielectrics such as HfO2 are considered to be the most promising materials because their superior characteristics of higher dielectric constants and higher crystallization temperatures.
In this thesis, characteristics of metal-insulator-semiconductor (MIS) capacitors with high-K dielectric layers of HfO2/Al2O3/HfO2 and HfO2/Al2O3 are reported. The basic electrical and physical properties as well as reliability are discussed. Experimental study shows that the best result is obtained from the HfO2/Al2O3/HfO2 structure with PMA at 600°C.
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