Electrical Characteristic and Reliability of Al2O3/HfO2 Stack High-K Gate Dielectric
碩士 === 國立雲林科技大學 === 電子與光電工程研究所碩士班 === 100 === High-dielectric constant (high-K) material has been used to replace the conventional ultra-thin SiO2 because the latter suffers from large direct tunneling leakage current, which leads to large power consumption. Many kinds of high-K materials can be use...
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ndltd-TW-100YUNT53930512015-10-13T21:56:00Z http://ndltd.ncl.edu.tw/handle/13842318907211430059 Electrical Characteristic and Reliability of Al2O3/HfO2 Stack High-K Gate Dielectric 氧化鋁/氧化鉿堆疊結構閘極高介電質之電性分析與可靠度研究 Kai-Yuan Fang 方楷源 碩士 國立雲林科技大學 電子與光電工程研究所碩士班 100 High-dielectric constant (high-K) material has been used to replace the conventional ultra-thin SiO2 because the latter suffers from large direct tunneling leakage current, which leads to large power consumption. Many kinds of high-K materials can be used as the gate dielectric. Among them, Hf-based dielectrics such as HfO2 are considered to be the most promising materials because their superior characteristics of higher dielectric constants and higher crystallization temperatures. In this thesis, characteristics of metal-insulator-semiconductor (MIS) capacitors with high-K dielectric layers of HfO2/Al2O3/HfO2 and HfO2/Al2O3 are reported. The basic electrical and physical properties as well as reliability are discussed. Experimental study shows that the best result is obtained from the HfO2/Al2O3/HfO2 structure with PMA at 600°C. Yang-Hua Chang 張彥華 2012 學位論文 ; thesis 59 zh-TW |
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碩士 === 國立雲林科技大學 === 電子與光電工程研究所碩士班 === 100 === High-dielectric constant (high-K) material has been used to replace the conventional ultra-thin SiO2 because the latter suffers from large direct tunneling leakage current, which leads to large power consumption. Many kinds of high-K materials can be used as the gate dielectric. Among them, Hf-based dielectrics such as HfO2 are considered to be the most promising materials because their superior characteristics of higher dielectric constants and higher crystallization temperatures.
In this thesis, characteristics of metal-insulator-semiconductor (MIS) capacitors with high-K dielectric layers of HfO2/Al2O3/HfO2 and HfO2/Al2O3 are reported. The basic electrical and physical properties as well as reliability are discussed. Experimental study shows that the best result is obtained from the HfO2/Al2O3/HfO2 structure with PMA at 600°C.
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author2 |
Yang-Hua Chang |
author_facet |
Yang-Hua Chang Kai-Yuan Fang 方楷源 |
author |
Kai-Yuan Fang 方楷源 |
spellingShingle |
Kai-Yuan Fang 方楷源 Electrical Characteristic and Reliability of Al2O3/HfO2 Stack High-K Gate Dielectric |
author_sort |
Kai-Yuan Fang |
title |
Electrical Characteristic and Reliability of Al2O3/HfO2 Stack High-K Gate Dielectric |
title_short |
Electrical Characteristic and Reliability of Al2O3/HfO2 Stack High-K Gate Dielectric |
title_full |
Electrical Characteristic and Reliability of Al2O3/HfO2 Stack High-K Gate Dielectric |
title_fullStr |
Electrical Characteristic and Reliability of Al2O3/HfO2 Stack High-K Gate Dielectric |
title_full_unstemmed |
Electrical Characteristic and Reliability of Al2O3/HfO2 Stack High-K Gate Dielectric |
title_sort |
electrical characteristic and reliability of al2o3/hfo2 stack high-k gate dielectric |
publishDate |
2012 |
url |
http://ndltd.ncl.edu.tw/handle/13842318907211430059 |
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