Investigation of fabrication and design of ceramic field-effect transistor-transistor logic devices using nano-ZnO/TiO2

• Main Authors: Ju-Wei Kuo, 郭如維
• Other Authors: 廖朝光
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/02270698138642084328

碩士 === 元智大學 === 化學工程與材料科學學系 === 100 === The inverter circuits were designed and fabricated by the combinations of ceramic-based N-channel and P-channel field-effect transistors (FETs). Both of the ceramic-based transistors, consist of ZnO and TiO2 films, were fabricated using ZnO and TiO2 solution samples by wet coating technique. Different sequences of ZnO and TiO2 thin films were characterized as diodes and performed in different current-voltage characteristics. The transistors were designed as a bottom-gate configuration on ITO glass substrate. Results showed that the N-channel FET (N-FET) can be performed if the TiO2 film was coated on ITO as the gate and two ZnO films were fabricated on top of the TiO2 film as the source and drain regions. On the contrary, if the ZnO film was made on ITO as the gate and two TiO2 films were produced on top of the ZnO film as the source and drain regions, the P-channel FET (P-FET) can be obtained. The inverter circuits can be further fabricated using the combinations of the P-FET and N-FET devices.