The Application of boundary element method to simulate the stress distribution and nonuniformity on wafer surface of chemical mechanical polishing process

碩士 === 元智大學 === 機械工程學系 === 100 === Chemical mechanical polishing (CMP) is important in improving planarization and materials remove ratio of wafer in semiconductor manufacturing. We used a method, boundary element method (BEM), can reduce computer memory and computing time to simulate the CMP proces...

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Main Authors:	Jyun-Ting ,Guo, 郭俊廷
Other Authors:	邱傳聖
Format:	Others
Language:	zh-TW
Online Access:	http://ndltd.ncl.edu.tw/handle/45011651755032571334

id	ndltd-TW-100YZU05489070
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spelling	ndltd-TW-100YZU054890702015-10-13T21:33:10Z http://ndltd.ncl.edu.tw/handle/45011651755032571334 The Application of boundary element method to simulate the stress distribution and nonuniformity on wafer surface of chemical mechanical polishing process 應用邊界元素法模擬化學機械研磨之晶圓應力分佈對表面不均勻度的影響 Jyun-Ting ,Guo 郭俊廷碩士元智大學機械工程學系 100 Chemical mechanical polishing (CMP) is important in improving planarization and materials remove ratio of wafer in semiconductor manufacturing. We used a method, boundary element method (BEM), can reduce computer memory and computing time to simulate the CMP process. This study will build a 2-D axisymmetric quasi-static model for chemical mechanical polishing process. The analysis of von Mises stress on the wafer-pad interface was solved by BEM. The effects of thickness, elastic modulus, down force on the non-uniformity of wafer were investigated. The variation of various stress distribution on the wafer were also discussed. 邱傳聖學位論文 ; thesis 39 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 元智大學 === 機械工程學系 === 100 === Chemical mechanical polishing (CMP) is important in improving planarization and materials remove ratio of wafer in semiconductor manufacturing. We used a method, boundary element method (BEM), can reduce computer memory and computing time to simulate the CMP process. This study will build a 2-D axisymmetric quasi-static model for chemical mechanical polishing process. The analysis of von Mises stress on the wafer-pad interface was solved by BEM. The effects of thickness, elastic modulus, down force on the non-uniformity of wafer were investigated. The variation of various stress distribution on the wafer were also discussed.
author2	邱傳聖
author_facet	邱傳聖 Jyun-Ting ,Guo 郭俊廷
author	Jyun-Ting ,Guo 郭俊廷
spellingShingle	Jyun-Ting ,Guo 郭俊廷 The Application of boundary element method to simulate the stress distribution and nonuniformity on wafer surface of chemical mechanical polishing process
author_sort	Jyun-Ting ,Guo
title	The Application of boundary element method to simulate the stress distribution and nonuniformity on wafer surface of chemical mechanical polishing process
title_short	The Application of boundary element method to simulate the stress distribution and nonuniformity on wafer surface of chemical mechanical polishing process
title_full	The Application of boundary element method to simulate the stress distribution and nonuniformity on wafer surface of chemical mechanical polishing process
title_fullStr	The Application of boundary element method to simulate the stress distribution and nonuniformity on wafer surface of chemical mechanical polishing process
title_full_unstemmed	The Application of boundary element method to simulate the stress distribution and nonuniformity on wafer surface of chemical mechanical polishing process
title_sort	application of boundary element method to simulate the stress distribution and nonuniformity on wafer surface of chemical mechanical polishing process
url	http://ndltd.ncl.edu.tw/handle/45011651755032571334
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The Application of boundary element method to simulate the stress distribution and nonuniformity on wafer surface of chemical mechanical polishing process

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