Transparent Conducting Aluminum Doped Zinc Oxide Thin Films by Low-Temperature Aqueous Chemical Synthesis

• Main Author: 林慧婷
• Other Authors: 駱榮富
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/12609254563537099641

碩士 === 逢甲大學 === 材料科學與工程學系 === 101 === This study is aimed at developing low-temperature wet chemical synthesis routes, namely chemical bath deposition (CBD) to deposit transparent conductive oxide such as aluminum doped zinc oxide (ZnO:Al or AZO) thin films on the surfaces of glass substrates at deposition temperature of 70oC for 20~120 min. The deposited AZO thin films were heat treated to improve the electrical conductivity and transmittance. The process parameters involved in CBD route include zinc ion precursor concentration, aluminum dopant concentration, reaction temperature and time as well as the heat treatment conditions such as annealing temperature (200~500oC) and annealing atmospheres (N2 and H2). The Al-doped zinc oxide films were successfully produced by CBD method to obtain a deposition rate of 6.25 nm/min at 70oC with film thickness of 200~250 nm. The microstructure, optical transmittance, crystalline phases, surface roughness, and electrical conductivity of AZO film samples were measured under field-emission SEM, UV-Vis spectroscopy, XRD, AFM, and 4-point probe I-V stage. It was found that the AZO films under annealing in pure hydrogen atmosphere had better electrical conductivity (8.67x10-1 -cm) than that treated in nitrogen atmosphere or ambient condition. The average transmittance of AZO films after heat treatment was high than 85%.