The Fabrication of CuInGaSe2 Solar Cells Prepared by Two Step Methods

• Main Authors: Duan,Xi-Ming, 段錫銘
• Other Authors: Kuei,Pian-Yu
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/4kjr85

碩士 === 國防大學理工學院 === 光電工程碩士班 === 102 === The Characterization of copper-indium-gallium selenide absorbers is studied by two step preparation method. To uniformly control the metal composition, the precursor of copper-indium-gallium metal are stacked in sequence of Cu(300nm)/In(700nm)/Ga (300nm) by a thermal evaporator. The precursor was selenized by a furnace and Se powder in a closed tube. From EDS analysis, it is found that no gallium exists in the formation film. A thicker Ga metal is used to increase the Ga content. However, it is still no Ga content in the formation films. The reason may be attributed to uneffective selenization processes. Therefore, multistep selenizations are used to effectively control the metal composition. The Ga content of the formation film is about 6~8%. However, the thicker the In layer, the larger the surface roughness. Too large surface roughness will result in the coverage problem of CdS buffer layer deposition. Uncover region of CdS thin film may cause a leakage current path. It will seriously degrade the solar efficiency. It is found that a low surface roughness and good metal composition of Cu(24.93%)/Ga(6.11%)/In(20.03%) are obtained when the thickness of In layer decreases from 350nm to 110nm.