| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 101 === In this study, we grow InGaP epilayer on Ge substrate by metal organic chemical vapor deposition (MOCVD) and investigate the effect of surfactant Sb incorporating into InGaP epilayer.
First, the temperature dependence of PL (15K ~ 300K) has been done in sample CCC (without Sb) and sample AAA (with Sb), and observe the luminescence position with increasing temperature. We find out that the luminescence position of sample AAA will be transferred with increasing temperature. Next, we use rate equation (equation 3-4) to prove that carriers of sample AAA indeed transferred and obtain the activation energy of low energy one. Then, we use PL, TRPL and equation 4-2 to calculate the localization depth, mobility edge and exciton lifetime of sample CCC and AAA in 15K. We find out that the localization depth and low energy activation energy of sample AAA are both 5meV.
Finally, compare to sample CCC and sample AAA, we find out that all the values (localization depth, mobility edge and exciton lifetime) are increased after incorporating Sb. We speculate that the reason may be uneven energy band which is caused by Sb.
|
|---|
