A Novel Four-Masks RSD Bottom-Gated Poly-Si Thin-Film Transistors With Field Plate Design
碩士 === 逢甲大學 === 電子工程學系 === 101 === In this study “A Novel Four-Masks RSD Bottom-Gated Poly-Si Thin-Film Transistors With Field Plate Design”. We use a current and high electric field split idea to reduce the impact ionization at the drain area to improve the kink effect. Moreover, the raised Sourc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88814638794522874037 |