| Summary: | 碩士 === 國立中興大學 === 光電工程研究所 === 101 === The present study focuses on the relationship between low temperature poly-Si thin film transistor (LTPS N-TFTs) channel direction and carrier mobility. First, we study related knowledge from the literature as well as introduce the background and process technology regarding thin film transistors. We also introduce the reduction of the grain boundary defect. Our study is broken down into two steps.
The first step, we observe the relationship between LTPS N-TFTs and its electron characteristics. Then, we define some electron parameters that we want to know. From the ID-VG and ID-VD measurement results, we show that the drain current of LTPS N-TFTs will be an up- and down-swing curve. The smallest current occurs while the channel direction is equal to 0°. When the channel direction is equal to 45°, it has the largest drain current and the highest carrier mobility. Additionally, the drain current is reduced again at the channel direction when it is equal to 90°.
The second step, we fit the measured result with a Sentaurus TCAD to simulate its electron characteristics. We establish a trap model to help us describe its grain trap state. As a result, the different channel directions have different trap state influences on carrier mobility that results in different drain currents.
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