Photoelectric characteristics of Mn-doped ZnO nanowires

• Main Authors: Wei-Hao Chen, 陳韋豪
• Other Authors: 何孟書
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/61749312655110764382

碩士 === 國立中興大學 === 物理學系所 === 101 === Zinc oxide is a semiconductor material with widely applications. It has extremely large direct binding energy and exciton energy (about 60 meV) at room temperture allowance the formation of stable exciton in ZnO at room temperature and thus ZnO has significant advantages in optoelectronic applications such as ultraviolet sensor. In this study, High density Mn-doped ZnO nanowires arrays were fabricated via low temperature hydrothermal at 90°C for 3 hour. The structure and magnetism of the nanowires have been examined. The results of photo-luminescent (PL) and absorption spectrum showed that Mn-doped ZnO emission peak will blue shift. X-ray diffraction (XRD) and transmission electron microscope (TEM) demonstrate that Mn was successfully doped into the nanowires and nanowires were single-crystal grown along the (002) direction. Raman spectrum demonstrate Mn dopeing in the form of ZnO nanowires Besides, ZnO nanowires were used to manufacture single-nanowire-devices by focus ion beam (FIB). Upon the illumination by a ultra-violet light (365nm), photoelectric properties and UV responding properties were compared. Nanowire sensors have shorter response time and recovery times than nanowires array sensors. Mn doped ZnO can effective increase the ratio of current variation.