TSV induced stress analysis using 3D Raman spectroscopy technique
碩士 === 國立中興大學 === 奈米科學研究所 === 101 === Because of the mainstream of electronic products toward portable, pushing the package of integrated circuit become lighter and smaller, and TSV technology emerges as a result, which can save space and cost by 3D stacking separate chips in a single package. But...
Main Authors: | Bo-Yi Huang, 黃柏益 |
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Other Authors: | Mingchih Shih |
Format: | Others |
Language: | zh-TW |
Published: |
2013
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Online Access: | http://ndltd.ncl.edu.tw/handle/44547444761961302947 |
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