Crystallization and Optoelectro-Magnetic Properties of ZnO Thin Film by Doping (Mn; Ni) Transition Metals

• Main Authors: Kuan-LingChen, 陳冠霖
• Other Authors: Fei-Yi Hung
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/22190178090244876981

碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 101 === The spin semiconductor combined the carrier transport and electron spin characteristic. ZnO nanostructure has good optoelectronic properties with potential applications, it’s also a potential material in diluted magnetic semiconductor. In this study, we doped transition metals into ZnO nanostructure by using thermal annealing and electrical induced crystallization mechanism (EIC). We combined ZnO with transition metal (Mn, Ni) on SiO2 substrate. Doping transition metals improved crystallization, optoelectronic and became the diluted magnetic semiconductor by thermal annealing. In addition, the ZnO nanowires grew up on the top of ZnO/Ni films, and the metal layer was a conductive channel to perform the EIC process. The EIC process induced joule heat and electric-thermal effect into the metal film, it can improve the crystallization and optoelectro-magnetic properties. EIC process induced much lower temperature than thermal process. Therefore, it can use in flexible plastic substrate and low temperature nano electro-optic devices.