Recessed Gate AlGaN/GaN High Elctron Mobility Transistors Using Inductively Coupled Plasma Etching
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === The use of inductively coupled plasma etcher system to GaN gate recess process is demonstrated. Gate recess modulates the distance between the gate metal and the two-dimensional electron gas. The threshold voltage and related device performance can be adjus...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08633325958001595994 |