Photoresponse characteristics of photonic devices studied by scanning photocurrent microscopy

• Main Authors: Yi-ChunChen, 陳宜群
• Other Authors: Hsu-Cheng Hsu
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/01633847636413778585

碩士 === 國立成功大學 === 光電科學與工程學系 === 101 === In this study, the photoresponse characteristics of photonic devices have been investigated by using scanning photocurrent microscopy (SPCM). The nonuniform distribution of photocurrents in dye-sensitized solar cells (DSSCs) was measured by SPCM. The magnitude of generated photocurrent is different at different excitation wavelength. According to the N719 absorption spectrum, the different magnitude of photocurrent is attributed to the different absorption of N719 dye at different wavelength. We investigated the photoresponse characteristics of single SnO2 nanowire device by scanning photocurrent microscopy. The maximum photocurrent position shifts toward the hole collector (negatively biased electrode) with increasing bias voltage, indicating that hole collection is the limiting factor in the total charge collection process. The photocurrent profile along the single SnO2 nanowire can decide the diffusion length of electrons and holes.