Vertical Organic Transistor with Metallic Grid Fabricated by Nanoimprint Lithography

• Main Authors: Hsu, Yung, 徐雍
• Other Authors: Yang, Sheng-Hsiung
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/89648105111243352524

碩士 === 國立交通大學 === 光電系統研究所 === 101 === In recent years, new-generation electronic field is focusing on flexible electronic devices and displays. Solution-processed organic transistor right has the potential for low-cost, large-area, and roll-to-roll process. In previous research, our lab has been able to fabricate solution-processed organic transistor with high output current, high on/off current ratio and low operation voltage named space-charge-limited transistor. Its working principle is similar to vacuum triode, switching vertical channel by nano-grid base electrode. However, our nano-grid base electrode is limited by the fabrication, and therefore human factors often affect our analysis of different process conditions. Previous research has demonstrated that large vertical electron-transport channels will cause large leakage current, resulting a lower on/off current ratio, and large vertical electron-transport channels are often resulting from the accumulation of polystyrene spheres in fabrication. In order to develop the nano-grid base electrode with high stability over a large area, nanoimprint lithography is a very promising technology. This work is cooperating with Prof. L. A. Wang’s lab, National Taiwan University, to develop base electrode with nano-grid array. In order to further reduce costs, further enhancing the commercial value, we combine the atomic layer deposition and nanoimprint lithography. We successfully fabricated vertical organic transistor with metallic nano-grid array. The on current is 3.5 mA/cm2 and the on/off current ratio is above 104. In the future, with further process optimization, a better device performance can be expected.