The New Circuits Using Dual-Gate IGZO Thin Film Transistors
碩士 === 國立交通大學 === 光電工程研究所 === 101 === Recently, the dual-gate (DG) amorphous InGaZnO4 (IGZO) thin film transistors (TFTs) with two gates at the bottom and on the top was proposed to have better performance and stability than single-gate TFT. The drain current of TFT using the bottom gate in its prim...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54789043931525912219 |