Study on Novel Transparent Amorphous Indium Zinc Tin Oxide Thin Film Transistors Technology
碩士 === 國立交通大學 === 光電工程研究所 === 101 === During the recent years, there have been great interests in studying amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). Because a-IGZO TFTs have higher carrier mobility and better reliability than traditional covalent bond semiconductors (e.g., a-Si:H)....
Main Authors: | Huang, Wei-Hsun, 黃韋勳 |
---|---|
Other Authors: | Liu, Po-Tsun |
Format: | Others |
Language: | en_US |
Published: |
2013
|
Online Access: | http://ndltd.ncl.edu.tw/handle/98354166675734617991 |
Similar Items
-
Study on the effect of oxygen incorporation on amorphous Indium Zinc Tin Oxide transparent thin film transistors
by: Liu, Mei-Jeng, et al.
Published: (2013) -
Study on the effect of channel passivation layer on Transparent Amorphous Indium Zinc Tin Oxide thin film transistors
by: Wu, Yu-Ta, et al.
Published: (2014) -
Study on Transparent Amorphous Indium Oxide Thin Film Transistors Technology
by: Lai, Yu-Chia, et al.
Published: (2014) -
High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide
by: Imas Noviyana, et al.
Published: (2017-06-01) -
Study of Microwave annealing Technology on Novel Transparent Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
by: Lo, Yuan-Jou, et al.
Published: (2012)