Backside Via Hole Process for Grounding GaAs HEMTs by Using ICP Dry Etching
碩士 === 國立交通大學 === 材料科學與工程學系 === 101 === This study focuses on ICP dry etching optimization for via hole structure of GaAs/AlGaAs/InGaAs pHEMTs and investigation of grounding GaAs HEMTs. The etching process of the via hole structure for GaAs substrate was optimized to obtain ideal via hole profiles w...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61271534951391544898 |