| Summary: | 碩士 === 國立交通大學 === 照明與能源光電研究所 === 101 === Exciton quenching in the recombination zone close to electrochemically doped regions would be one of the bottlenecks for improving device efficiencies of solid-state white light-emitting electrochemical cells (LECs). To further enhance device efficiencies of white LECs for practical applications, we adjust the active-layer thickness to reduce exciton quenching. In white LECs with properly thickened active-layer thickness, the recombination zone can be situated near the center of the active layer, rendering mitigated exciton quenching and thus enhanced device efficiencies. High external quantum efficiencies and power efficiencies of optimized devices reach ca. 11% and 20 lm/W, respectively, which are among the highest reported for white LECs. These results confirm that tailoring the thickness of the active layer to avoid exciton quenching would be a feasible approach to improve device efficiencies of white LECs.
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