Study on the Two-Dimensionally Grain-Boundary-Controlled Polycrystalline Silicon Thin-Film and Nanowire Transistors for Nonvolatile Memory Applications
博士 === 國立交通大學 === 電子研究所 === 101 === High-performance low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) are key devices in the production of high-quality active-matrix organic light-emitting displays (AMOLEDs), full-function system-on-panel (SOP), and three-dimensional integ...
Main Authors: | Wang, Chao Lung, 王昭龍 |
---|---|
Other Authors: | Cheng, Huang Chung |
Format: | Others |
Language: | zh-TW |
Published: |
2012
|
Online Access: | http://ndltd.ncl.edu.tw/handle/nbv58v |
Similar Items
-
Pi-Gate Nanowires for the Polycrystalline Silicon Thin-Film Transistor Nonvolatile Memory with an HfO2 Trapping layer
by: Chen, Lun-Jyun Chen, et al.
Published: (2009) -
Ambipolar germanium nanowire transistors and their nonvolatile memory applications
by: Chao-Fu Chen, et al.
Published: (2015) -
The Analysis of Grain Boundary Barrier Effect in Polycrystalline Silicon Thin-Film Transistors
by: Chao-Chian Chiu, et al.
Published: (2005) -
Fabrication and Characterization of Polycrystallin Silicon Thin-Film Transistor and Nonvolatile Memory with Block Oxide and Body-tie
by: Hung-Jen Tseng, et al.
Published: (2009) -
Fabrication and Characterization of Novel Low Temperature Polycrystalline Silicon Thin-Film Transistors and Advanced Nonvolatile Memory
by: Chun-Hao Tu, et al.
Published: (2007)