Fabrication and characterization of ZrO2-based memory devices

• Main Authors: JEN FU YU, 余振富
• Other Authors: 林祐仲
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/01227563167360139602

碩士 === 國立彰化師範大學 === 光電科技研究所 === 101 === In the study, ZrO2 films deposited on Si substrates were prepared by the sol-gel method for the different polyvinyl alcohol (PVA)/Zr atomic concentration ratios. X-ray diffraction, scanning electron microscope and photoluminescence measurements were used to characterize the ZrO2 film. It is shown that the incorporation of PVA into the sol-gel solution may lead to the reduced number of crystallographic defects of ZrO2, improving the film quality. In addition, the electrical properties of Au/ZrO2/heavily p-type Si devices and Au/ZrO2/n-type Si metal-oxide-semiconductor (MOS) capacitors were examined. A link between the defects and carrier transport was established for Au/ZrO2/n-type Si MOS capacitors. For Au/ZrO2/heavily p-type Si devices, I used a hysteresis-conduction model for considering the charge trapping/detrapping effect. Note, a suitable PVA content is an important issue for tuning memory behavior of ZrO2-based memory devices.