Effects of sulfide treatment on electronic and optoelectronic properties of n-type SnS/p-type Si diodes

• Main Authors: Chung-Cheng Huang, 黃崇政
• Other Authors: Yow-Jon Lin
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/83315684980572508934

碩士 === 國立彰化師範大學 === 光電科技研究所 === 101 === The effect of S content on the electrical property of the sol-gel SnSx films was examined. The experimental identification confirms that n-type conversion is due to an increase in the atomic concentration ratio of Sn4+/(Sn4++Sn2+) in the S-rich film. The probability of having formed Sn vacancies (VSn) should be high under S-rich growth conditions. Transformation from VSn to VSn2- is accompanied by lattice relaxation. Therefore, transformation from Sn2+ to Sn4+ is an offset to lattice relaxation under S-rich growth conditions, increasing the electron density and producing n-type conversion. A suitable sulfur concentration is an important issue for tuning conduction type of SnSx. The fabrication and detailed electrical properties of heterojunction diodes based on n-type SnS1.15 (n-SnS1.15) and p-type Si (p-Si) were also reported. The effect of sulfide treatment of p-Si on the power conversion efficiency (PCE) of the n-SnS1.15/unpolished p-Si solar cell was investigated. The n-SnS1.15/unpolished p-Si device without sulfide treatment showed a rectifying behavior with an ideality factor (η) of 1.73 and high series resistance (Rs). However, the n-SnS1.15/unpolished p-Si diode with sulfide treatment for 40 s showed a good rectifying behavior with η of 1.55 and low Rs. Therefore, the enhanced PCE can be interpreted by the device rectifying performance and interface passivation. Note, sulfide treatment plays an important role for producing high-efficiency devices.