Design of Multi-Threshold Threshold logic Gate
碩士 === 國立嘉義大學 === 資訊工程學系研究所 === 101 === This paper describes the design of a Multi-Threshold Threshold logic Gate (MTTG) based on the N-type MOS-BJT-NDR devices. The circuit is designed and operated using the monostable-bistable transition logic element (MOBILE) principle. We use the NMOS to control...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/92591405015360000849 |
| Summary: | 碩士 === 國立嘉義大學 === 資訊工程學系研究所 === 101 === This paper describes the design of a Multi-Threshold Threshold logic Gate (MTTG) based on the N-type MOS-BJT-NDR devices. The circuit is designed and operated using the monostable-bistable transition logic element (MOBILE) principle. We use the NMOS to control the I-V characteristic curve and switch of the NDR device. The MTTG circuit is composed of the negative-differential-resistance (NDR) circuits and NMOS devices. We can achieve the programmable logic output with the nonlinear function based on this structure. Compared to the traditional logic circuit, this propose is simple and lower gate counts. And we taped out IC use CMOS process and BiCMOS process from Chip Implementation Center (CIC). We find the characteristic that NDR device has linear and nonlinear characteristic curve. We use the characteristic to do three applications, Transmission Gate, Oscillator and MTTG.
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