Effects of Surface Passivation on AlGaN/GaN High-Electron Mobility Transistors
碩士 === 國立東華大學 === 材料科學與工程學系 === 101 === This research mainly investigated on AlGaN/GaN high electron mobility transistors (HEMTs) using HfO2 and TiO2 as a surface passivation layer, respectively. Excellent improvements in HfO2-passivated device performances have been achieved for the present design,...
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Format: | Others |
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2013
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Online Access: | http://ndltd.ncl.edu.tw/handle/77349172766757032452 |