Effects of Surface Passivation on AlGaN/GaN High-Electron Mobility Transistors

Effects of Surface Passivation on AlGaN/GaN High-Electron Mobility Transistors

碩士 === 國立東華大學 === 材料科學與工程學系 === 101 === This research mainly investigated on AlGaN/GaN high electron mobility transistors (HEMTs) using HfO2 and TiO2 as a surface passivation layer, respectively. Excellent improvements in HfO2-passivated device performances have been achieved for the present design,...

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Bibliographic Details
Main Authors:	Shin-Fu Lin, 林信甫
Other Authors:	Yu-Shyan Lin
Format:	Others
Published:	2013
Online Access:	http://ndltd.ncl.edu.tw/handle/77349172766757032452

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