The Effect of Thinning Barrier Layer on Electrodeposition of Cu2O into Anodic Aluminum Oxide

• Main Authors: Guo-zhen XU, 徐國真
• Other Authors: Tsung-ta Kao
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/33180307868140265246

碩士 === 國立高雄第一科技大學 === 光電工程研究所 === 101 === This study is to explore how to achieve barrier layer thinning, as well as its impact on the plating of Cu2O into the pores of anodic aluminum oxide (AAO), which was prepared in the solution of phosphoric acid mixed with oxalic acid. As the presence of AAO barrier layer after second anodization, the electrodeposition of metal or semiconductor into the pores of AAO was limited. Therefore, it is the goal of this thesis to explore the effect of barrier layer on electroplating of metal or semiconductor into the pores, and how to thinning the barrier layer. In order to study thinning of AAO barrier layer thinning and while understanding its impact on the electroplating process, the subsequent three voltage drop processes after anodizations using solutions of phosphoric acid mixed with oxalic acid, oxalic acid and sulfuric acid solution were conducted. After each step of barrier thinning, electroplating process of Cu2O was conducted to observe the impact of previous thinning process. It is shown that pulse electrodeposition of Cu2O can fill the pores more efficiently than the DC one. The reduction potential of-1.4V for Cu2O was measured by cyclic voltammetry. Therefore, pulse voltages from -1V to-1.4V was adopted with the pulse frequency of 100Hz. The pulse duty cycle between 70 to 75% showed better results. The deposited Cu2O on the AAO template was analyzed by SEM and XRD.