Sythesis of graphene with CNT on Cu foil
碩士 === 國立中山大學 === 化學系研究所 === 101 === Use APCVD method to synthesize graphene with CNT on Cu foil(G-CNT/Cu). Results represent that more H2 gas and higher temperarure would have fewer defects and highly crystalline FLG growth on Cu foil . Also indicated that introduction of more H2 gas would be benefi...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10266161369912246946 |
| Summary: | 碩士 === 國立中山大學 === 化學系研究所 === 101 === Use APCVD method to synthesize graphene with CNT on Cu foil(G-CNT/Cu). Results represent that more H2 gas and higher temperarure would have fewer defects and highly crystalline FLG growth on Cu foil . Also indicated that introduction of more H2 gas would be beneficial for the quality of graphene. Diluted CH4 or C2H4 and high volume H2 gas are critical to suppress the templated growth and hence the graphene layer control. And the best reaction gas ratio for grow graphene is C2H4/H2=5/500sccm. Use Cu metal catalyst to grow CNT on graphene directly. Amounts and size of CNT would along with time increase become more and bigger, but accompany more defects. When reaction temperature higher, size and amount of CNT would increase, but defects reverse.
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