Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device
博士 === 國立中山大學 === 物理學系研究所 === 101 === With the development of portable electronic products, the requirement of nonvolatile memory is higher than before. In order to increase the capacity of nonvolatile memory in portable electronic products, the nonvolatile memory device must be scaled down. However...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2013
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Online Access: | http://ndltd.ncl.edu.tw/handle/95530858380377695305 |