Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device

博士 === 國立中山大學 === 物理學系研究所 === 101 === With the development of portable electronic products, the requirement of nonvolatile memory is higher than before. In order to increase the capacity of nonvolatile memory in portable electronic products, the nonvolatile memory device must be scaled down. However...

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Bibliographic Details
Main Authors: Jheng-Jie Huang, 黃正杰
Other Authors: Ting-Chang Chang
Format: Others
Language:en_US
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/95530858380377695305

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